Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers). Investigation shows that this soft- ware is very efficient in studying the effect of parameter changes in the design to obtain the desired impulse voltages and. PSpice model library includes parameterized models such as BJTs, JFETs, MOSFETs, IGBTs, SCRs, discretes, operational amplifiers, optocouplers, regulators, and PWM controllers from various IC vendors. The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the. Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers). The temperature dependence of the saturation current is defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponent. The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the. The series is a set of tutorials and information on SPICE simulation, OrCAD pSPICE compatibility, SPICE modeling, and other concepts in circuit simulation. Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. The NI SPICE Simulation Fundamentals series is your free resource on the internet for learning about circuit simulation. The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS.
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